文献类型：期刊文章

作　　者：张世斌[1] 孔光临[1] 徐艳月[1] 王永谦[1] 刁宏伟[1] 廖显伯[1]

机构地区：[1]中国科学院半导体所表面物理实验室凝聚态物理中心,北京100083

出　　处：《Journal of Semiconductors》

基　　金：国家重点基础研究资助项目 ( No.G2 0 0 0 0 2 82 0 1)~~

年　　份：2002

卷　　号：23

期　　号：8

起止页码：794-799

语　　种：中文

收录情况：AJ、BDHX、BDHX2000、CAS、CSA、CSA-PROQEUST、CSCD、CSCD2011_2012、EBSCO、EI、IC、INSPEC、JST、RSC、SCOPUS、WOS、ZGKJHX、核心刊

摘　　要：Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below E _c are responsible for the two exponential functions.They are designated as negatively charged dangling bond D - centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking.

关 键 词：amorphous silicon  transient photoconductivity  light-induced change  

分 类 号：TN304.055]