文献类型：期刊文章

作　　者：毛容伟[1] 左玉华[1] 李传波[1] 成步文[1] 滕学公[1] 罗丽萍[1] 张合顺[2] 于金中[1] 王启明[1]

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083 [2]北京化工厂,北京100022

出　　处：《Journal of Semiconductors》

基　　金：国家重点基础研究发展规划(批准号:G2000036603);国家自然科学基金(批准号:90104003,60223001,60376025,60336010);国家高技术研究发展计划(批准号:2002AA312010)资助项目~~

年　　份：2005

卷　　号：26

期　　号：2

起止页码：271-275

语　　种：中文

收录情况：AJ、BDHX、BDHX2004、CAS、CSA、CSA-PROQEUST、CSCD、CSCD2011_2012、EBSCO、EI(收录号：2005159039419)、IC、INSPEC、JST、RSC、SCOPUS、WOS、ZGKJHX、核心刊

摘　　要：A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99 9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22 6% at the peak wavelength of 1 54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.

关 键 词：RCE photodetector  high quantum efficiency  direct bonding  bonding medium  INGAAS

分 类 号：TN215]