文献类型：期刊文章

作　　者：徐云[1] 曹青[1,2] 孙永伟[1] 叶晓军[1] 侯识华[1] 郭良[1,2] 陈良惠[1]

机构地区：[1]中国科学院半导体研究所 [2]惠州市中科光电有限公司,惠州516023

出　　处：《Journal of Semiconductors》

基　　金：国家高技术研究发展计划资助项目 (批准号 :2 0 0 2 AA3 13 0 5 0 )~~

年　　份：2004

卷　　号：25

期　　号：9

起止页码：1079-1083

语　　种：中文

收录情况：AJ、BDHX、BDHX2000、CAS、CSA、CSA-PROQEUST、CSCD、CSCD2011_2012、EBSCO、EI(收录号：2005038797151)、IC、INSPEC、JST、RSC、SCOPUS、WOS、ZGKJHX、核心刊

摘　　要：High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.

关 键 词：AlGaInP visible lasers  Ar ion beam dry etching  

分 类 号：TN248.4]