文献类型：会议

作　　者：王秩伟 龚恒翔 李雪

作者单位：西华师范大学物理与电子信息学院 四川 南充 637002 绍兴文理学院材料物理与设备研究所 浙江 绍兴 312000 绍兴文理学院材料物理与设备研究所 浙江 绍兴 312000

会议文献：第六届中国国际纳米科技研讨会论文集

会议名称：第六届中国国际纳米科技研讨会

会议日期：20071119

会议地点：成都

主办单位：中国微米纳米技术学会

出版日期：20071119

语　　种：中文

摘　　要：In this paper, polycrystalline TiO2 thin films were deposited on slide glass by a modified sputtering, which called oxygen pulse DC magnetron reactive sputtering as oxygen was systematically controlled like pulse. This technology can effectively abate target poisoning and increase the deposition rate by about 7 times compared with conventional reactive sputtering. The effects of deposition time, oxygen partial pressure and time of oxygen on-off on deposition rate, crystal structure and surface topography were investigated by elliptical polarization measurement, X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM), respectively. The results indicated that samples deposited at oxygen partial pressure of 30％, Toff = 30s and 20s have the best crystalline structure with unique phase of rutile or anatase and at Toff = 30s TiO2 film has the best surface topography. Besides, the sample tends to form rutile under higher deposition rate and lower oxygen concentration. Electrical resistivity was studied by Van der Pauw method and samples with which around 10 Ω·cm deposited at oxygen partial pressure of 30％, Toff = 30s and 50％, Toff = 40s, respectively, are suit for our further study.

关 键 词：TiO2 thin films  Reactive sputtering  Oxygen control  Deposition rate  

分 类 号：ZZ]